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MV-3T4G3D | Samsung 8GB Kit (2 X 4GB) DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage dual Rank Memory

MV-3T4G3D | Samsung 8GB Kit (2 X 4GB) DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage dual Rank Memory

MV-3T4G3D | Samsung 8GB Kit (2 X 4GB) DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage dual Rank Memory

MPNMV-3T4G3D
BrandSamsung
AvailabilityIN STOCK
ConditionRefurbished
SKU MV-3T4G3D Category Brand:
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MV-3T4G3D | Samsung 8GB Kit (2 X 4GB) DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage dual Rank Memory

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